ntr1p02l, nvtr01p02l power mosfet ? 20 v, ? 1.3 a, p ? channel sot ? 23 package these miniature surface mount mosfets low r ds(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. typical applications are dc ? dc converters and power management in portable and battery ? powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life ? miniature sot ? 23 surface mount package saves board space ? nvtr prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? pb ? free and halide ? free packages are available maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain ? to ? source voltage v dss ? 20 v gate ? to ? source voltage ? continuous v gs 12 v drain current ? continuous @ t a = 25 c ? pulsed drain current (t p 10 s) i d i dm ? 1.3 ? 4.0 a a total power dissipation @ t a = 25 c p d 400 mw operating and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ? junction ? to ? ambient r ja 300 c/w maximum lead temperature for soldering purposes, (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. d g s device package shipping ? ordering information p ? channel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. ntr1p02lt3g sot ? 23 (pb ? free) 10,000 tape & reel ? 20 v 220 m @ ? 4.5 v r ds(on) max ? 1.3 a i d max v (br)dss sot ? 23 case 318 style 21 marking diagram & pin assignment 2 p02 = specific device code m = date code* = pb ? free package 1 3 NTR1P02LT1G sot ? 23 (pb ? free) 3000 tape & reel (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. p02 m 1 gate 2 source drain 3 nvtr01p02lt1g sot ? 23 (pb ? free) 3000 tape & reel product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
on ty characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test condition symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (v gs = 0 v, i d = ? 10 a) v (br)dss ? 20 v zero gate voltage drain current (v ds = ? 16 v, v gs = 0 v) (v ds = ? 16 v, v gs = 0 v, t j = 125 c) i dss ? 1.0 ? 10 a gate ? body leakage current (v gs = 12 v, v ds = 0 v) i gss 100 na (note 1) gate threshold voltage (v ds = v gs , i d = ? 250 a) v gs(th) ? 0.7 ? 1.0 ? 1.25 v static drain ? to ? source ? resistance (v gs = ? 4.5 v, i d = ? 0.75 a) (v gs = ? 2.5 v, i d = ? 0.5 a) r ds(on) 0.140 0.200 0.22 0.35 dynamic characteristics input capacitance (v ds = ? 5.0 v) c iss 225 pf output capacitance (v ds = ? 5.0 v) c oss 130 transfer capacitance (v ds = ? 5.0 v) c rss 55 switching characteristics (note 2) turn ? on delay time (v gs = ? 4.5 v, v dd = ? 5.0 v, i d = ? 1.0 a, r l = 5.0 , r g = 6.0 ) t d(on) 7.0 ns rise time t r 15 turn ? off delay time t d(off) 18 fall time t f 9 total gate charge (v ds = ? 16 v, i d = ? 1.5 a, v gs = ? 4.5 v) q t 3.1 nc source ? drain diode characteristics continuous current i s ? 0.6 a pulsed current i sm ? 0.75 forward voltage (note 2) (v gs = 0 v, i s = ? 0.6 a) v sd ? 1.0 v reverse recovery time (i s = ? 1.0 a, v gs = 0 v, di s /dt = 100 a/ s) t rr 16 ns t a 11 t b 5.5 reverse recovery stored charge q rr 8.5 nc 1. pulse test: pulse width 300 s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperature. ntr1p02l, nvtr01p02l product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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